{"id":"arxiv/2601.01704","url":"https://arxiv.org/abs/2601.01704","tags":["cond-mat.mes-hall","physics.app-ph","quant-ph"],"score":0,"title":"Two-Qubit Module Based on Phonon-Coupled Ge Hole-Spin Qubits: Design, Fabrication, and Readout at 1-4 K","domain":"cond-mat.mes-hall","source":"arxiv","authors":["D. -M. Mei","S. A. Panamaldeniya","K. -M. Dong","S. Bhattarai","A. Prem"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"We present a device-level design study for a two-qubit module based on phonon-coupled germanium (Ge) hole-spin qubits targeted for operation at $1$--$4~\\mathrm{K}$. Building on prior theoretical modeling of phonon-engineered Ge qubits and phononic-crystal (PnC) cavities, we translate those modeling results into a fabrication-oriented two-qubit layout that integrates two gate-defined hole-spin qubits in a strained Ge quantum well with a GHz PnC defect mode intended to mediate a coherent phonon-based interaction. We specify the SiGe/Ge heterostructure, electrostatic gate layout, PnC cavity…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-01-05","reactions":{}}