{"id":"arxiv/2601.05306","url":"https://arxiv.org/abs/2601.05306","tags":["cond-mat.mes-hall","cond-mat.dis-nn","cond-mat.str-el","quant-ph"],"score":0,"title":"Interacting electrons in silicon quantum interconnects","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Anantha S. Rao","Christopher David White","Sean R. Muleady","Anthony Sigillito","Michael J. Gullans"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-01-08","reactions":{}}