{"id":"arxiv/2601.15355","url":"https://arxiv.org/abs/2601.15355","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Anuj Bathla","Subrat Kumar Pradhan","Ajit Kumar Dash","Prabhat Anand","M. Girish Chandra","Kenji Watanabe","Takashi Taniguchi","Akshay Singh","Veeresh Deshpande","Kasturi Saha"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two dimensional hole gas (2DHG), while an ensemble of near surface NV centers located $ \\sim 1~μm$ below the surface enables noninvasive magnetic imaging of current flow with micrometer scale spatial resolution. The FETs were electrically characterized over a range of drain source biases $V_{ds}= 0$ to $-15V$ and gate voltages,$V_{gs}= +3$ to $-9V$ followed by in situ…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-01-21","reactions":{}}