{"id":"arxiv/2601.16015","url":"https://arxiv.org/abs/2601.16015","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Quantum Hall Effect at 0.002T","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Alexander S. Mayorov","Ping Wang","Xiaokai Yue","Biao Wu","Jianhong He","Di Zhang","Fuzhuo Lian","Siqi Jiang","Jiabei Huang","Zihao Wang","Qian Guo","Kenji Watanabe","Takashi Taniguchi","Renjun Du","Rui Wang","Baigeng Wang","Lei Wang","Kostya S. Novoselov","Geliang Yu"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-01-22","reactions":{}}