{"id":"arxiv/2602.17249","url":"https://arxiv.org/abs/2602.17249","tags":["quant-ph","cond-mat.mtrl-sci","cond-mat.supr-con"],"score":0,"title":"Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits","domain":"quant-ph","source":"arxiv","authors":["Hsien-Wen Wan","Yi-Ting Cheng","Chao-Kai Cheng","Jui-Min Chia","Chien-Ting Wu","Sheng-Shiuan Yeh","Chia-Hung Hsu","Jueinai Kwo","Minghwei Hong"],"reviews":0,"subject":"quant-ph","summary":"We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-02-19","reactions":{}}