{"id":"arxiv/2603.13219","url":"https://arxiv.org/abs/2603.13219","tags":["cond-mat.mes-hall","cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Nathaniel M. Vegh","Pericles Philippopoulos","Raphaël J. Prentki","Wanting Zhang","Yu Zhu","Félix Beaudoin","Hong Guo"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures. Experimental offset data for these systems remain sparse away from endpoint compositions, making composition-dependent design difficult. We use atomistic first-principles density functional theory to compute valence- and conduction-band offsets across the full range 0 <= x <= 1. Random alloying is treated with special quasirandom structures, interface lineup terms are extracted from macroscopically…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-03-13","reactions":{}}