{"id":"arxiv/2603.15343","url":"https://arxiv.org/abs/2603.15343","tags":["quant-ph","physics.comp-ph"],"score":0,"title":"Ab Initio Study of Erbium Point Defects in 4H-SiC for Quantum Devices","domain":"quant-ph","source":"arxiv","authors":["Michael Kuban"],"reviews":0,"subject":"quant-ph","summary":"Identifying scalable materials systems that exhibit quantum behavior is a central challenge in quantum information science. Point defects in certain wide-bandgap semiconductors are promising in this regard due to the maturity of semiconductor manufacturing and ion implantation technology. Single erbium defect centers in 4H-SiC are examples of such defects that provide access to discrete defect-induced electron energy levels within the bulk material bandgap, which can be utilized for a variety of quantum technologies, such as single-photon emission for secure communication and distributed…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-03-16","reactions":{}}