{"id":"arxiv/2604.13435","url":"https://arxiv.org/abs/2604.13435","tags":["quant-ph"],"score":0,"title":"SiGe/Si(111)/SiGe heterostructure for Si spin qubits with electrons confined in L valley of conduction band","domain":"quant-ph","source":"arxiv","authors":["Takafumi Tokunaga","Hiromichi Nakazato"],"reviews":0,"subject":"quant-ph","summary":"In Si(111) crystals, a strong biaxial tensile strain applied within the (111) plane is considered to shift the lowest energy point of the conduction band from the $Δ$ valley to the L valley. Electrons confined in this L valley experience a splitting of their quadruply degenerate energy levels into an undegenerate single-level ground state (L1) and a triply degenerate excited state (L3). The energy of the single-level ground state is sufficiently low relative to the energies of the L3 valley and the $Δ$ valley, making it optimal as a two-level system for a qubit. Using deformation potential…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-04-15","reactions":{}}