{"id":"arxiv/2604.15653","url":"https://arxiv.org/abs/2604.15653","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Growth of quantum dots by droplet etching epitaxy in molecular beam epitaxy: theory, practice, and review","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Declan Gossink","Undurti S. Sainadh","Glenn S. Solomon"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown by droplet etching epitaxy is absent, unlike for other quantum dot growth techniques such as the related droplet epitaxy method or Stranski-Krastanov growth of InAs quantum dots. This review presents a detailed overview of the droplet etching epitaxy growth technique in the molecular beam epitaxy environment, with emphasis on the growth parameters…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-04-17","reactions":{}}