{"id":"arxiv/2604.16194","url":"https://arxiv.org/abs/2604.16194","tags":["quant-ph"],"score":0,"title":"Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies","domain":"quant-ph","source":"arxiv","authors":["Maximilian Hollendonner","Fedor Dzmitryevich Hrunski","Daniel Scheller","Kim Ullerich","Shravan Kumar Parthasarathy","Wolfgang Knolle","Maximilian Schober","Mirjam Neubauer","Durga Bhaktavatsala Rao Dasari","Michel Bockstedte","Roland Nagy"],"reviews":0,"subject":"quant-ph","summary":"Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible material. As these defects are increasingly integrated into practical quantum devices, they inevitably encounter lattice strain. However, while the impact of strain is well documented for other solid-state defects like NV centers in diamond, its specific influence on key VSi spin dynamics such as initialization fidelity and state lifetimes remain largely…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-04-17","reactions":{}}