{"id":"arxiv/2605.02646","url":"https://arxiv.org/abs/2605.02646","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Probing the Valley-Selective Tunneling Density of States in Monolayer MoS2 based Resonant Tunneling Devices","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Abir Mukherjee","Kajal Sharma","Ajit K Katiyar","Saranya Das","Samit K Ray","Samaresh Das"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D sheet along the c-axis sandwiched in between Al2O3 tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-04","reactions":{}}