{"id":"arxiv/2605.17073","url":"https://arxiv.org/abs/2605.17073","tags":["physics.ins-det","astro-ph.IM","quant-ph"],"score":0,"title":"Direct On-Wafer Measurements of Noise Parameters in C- and X-bands at $T=4$ K","domain":"physics.ins-det","source":"arxiv","authors":["Daniil Frolov","Jean-Olivier Plouchart","Utku Soylu"],"reviews":0,"subject":"physics.ins-det","summary":"This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a cryostat with wafer probes, two reflectometers, a programmable impedance generator, wideband isolators and bias tees and low noise preamplifier, all cooled to cryogenic temperatures, allowing to perform a full vector error-corrected wafer-level measurements of the discrete transistors and amplifier dies. The setup and its calibration procedure are designed in a…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-16","reactions":{}}