{"id":"arxiv/2605.17332","url":"https://arxiv.org/abs/2605.17332","tags":["quant-ph","cond-mat.mes-hall"],"score":0,"title":"Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band","domain":"quant-ph","source":"arxiv","authors":["Rabbia Tahir","Paweł Wyborski","Artur Tuktamyshev","Stefano Vichi","Richard Nötzel","Battulga Munkhbat","Stefano Sanguinetti"],"reviews":0,"subject":"quant-ph","summary":"Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material,…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-17","reactions":{}}