{"id":"arxiv/2605.17738","url":"https://arxiv.org/abs/2605.17738","tags":["physics.optics","quant-ph"],"score":0,"title":"A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform","domain":"physics.optics","source":"arxiv","authors":["Lillian Thiel","Boqiang Shen","Jasper R. Venneberg","Melissa A. Guidry","Nic Arnaud","Adam Slater","Lucas Wang","Xuefeng Li","Josh Castro","Yiming Pang","Max Meunier","Sahil D. Patel","Yang Shen","Theodore Morin","Igor Kudelin","Bowen Song","Kaustubh Asawa","John E. Bowers","Kerry Vahala","Nergis Mavalvala","Xinghui Yin","Steven Bowers","Minh A. Tran","Tin Komljenovic","Galan Moody"],"reviews":0,"subject":"physics.optics","summary":"Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with $<1$ dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-18","reactions":{}}