{"id":"arxiv/2605.23370","url":"https://arxiv.org/abs/2605.23370","tags":["cond-mat.mes-hall","cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"Selective Fermi-Level Pinning: A Design Strategy for Giant Rectification in Molecular Junctions","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Junnan Guo","Wenhui Fang","Jian Huang","Weikang Wu","Hui Li","Lishu Zhang"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Molecular rectifiers are key functional components of molecular-scale integrated circuits, yet achieving high rectification ratios remains a longstanding challenge due to the intrinsic symmetry of resonant tunneling and the complexity of interfacial energy-level alignment. Here, we propose a rectifier design strategy based on selective Fermi-level pinning that breaks transport symmetry via pinning interactions between molecular frontier orbitals and electrodes. This framework enforces tunneling transport to be predominantly governed by unoccupied molecular orbitals, while substantially…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-22","reactions":{}}