{"id":"arxiv/2606.00446","url":"https://arxiv.org/abs/2606.00446","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Jared Benson","Sanghyeok Park","Owen M. Eskandari","M. A. Wolfe","Brighton X. Coe","J. P. Dodson","S. N. Coppersmith","Mark Friesen","M. A. Eriksson"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controllably and repeatably alter the nanoscale trapped charge distribution at an oxide-semiconductor interface. We demonstrate this method on a Si/SiGe quantum dot device, and we find that the operating voltages can be controlled and made much more uniform. The method relies on illumination with near-infrared light in the presence of applied gate voltages, and it enables the tuning of the device operating point on a…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-05-30","reactions":{}}