{"id":"arxiv/2606.28776","url":"https://arxiv.org/abs/2606.28776","tags":["quant-ph","cond-mat.mtrl-sci"],"score":0,"title":"Properties of 2D Electron or Hole Gases at Tailored s-Si/SiGe Interfaces: A First-Principles Investigation","domain":"quant-ph","source":"arxiv","authors":["Garima Ahuja","Farha S","Tanuja Shridhar Joshi","Anil Shaji","Shobhana Narasimhan"],"reviews":0,"subject":"quant-ph","summary":"We have performed first-principles hybrid density functional theory calculations to study the formation and properties of two-dimensional electron or hole gases (2DEG or 2DHG) at s-Si/SiGe interfaces. For small Ge concentrations $x 0.25$ the band alignment suggests that either a 2DEG or 2DHG can be formed. The electronic band structure features two nearly degenerate 2DEG states at the bottom of the conduction bands, and two 2DHG states at the top of the valence band. These states can be accessed by appropriate doping and gating. Charge density plots of these states show that they feature…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-06-27","reactions":{}}