{"id":"arxiv/2607.04876","url":"https://arxiv.org/abs/2607.04876","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"A Unified Electrostatic-to-Spin Framework for Asymmetric Multi-Gate CMOS Quantum Devices","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Zeheng Wang","Yan Liu","Yue Hao","Genquan Han"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"In advanced complementary metal-oxide-semiconductor (CMOS) quantum chips, compact gate stacks make it difficult to connect lithographic geometry, electrostatic confinement and many-electron spin filling in one transparent model. This connection is central to design-technology co-optimization (DTCO). Here we develop a reduced-order analytical framework for asymmetric multigate silicon quantum-dot devices. Its electrostatic core, the Poisson-kernel coupled-interface Green-function (PK-GF) model, agrees with an independent finite-volume solution at the millivolt scale for the matched…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-07-06","reactions":{}}