{"id":"arxiv/2607.06342","url":"https://arxiv.org/abs/2607.06342","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Radio frequency readout and control of Ge/SiGe hole spin qubits with a global accumulation gate","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Tien-Ho Chang","Chi-Wei Lee","Jian-Chang Zeng","Chia-Hao Wei","Ching-Shiang Wang","Fu-Yuan Gu","Guan-Yu Yang","Ruei-Syuan Chiang","Ho-Chun Wu","Ming-Hao Lee","Ming-Wen Chu","Guang Li Luo","Ta-Chun Cho","Shawn S. H. Hsu","Tzu-Kan Hsiao"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Hole spin qubits in undoped Ge/SiGe quantum well structures have advanced rapidly in performance and scalability. However, stringent multi-layer patterning and overlay requirements of conventional overlapping-gate devices create a bottleneck for academic proof-of-concept experiments involving few-qubit devices. Here we present fabrication and measurements of Ge/SiGe spin qubit devices with a global accumulation gate and single-layer depletion fine gates, which substantially reduce fabrication complexity. With careful design of the gate-2DHG capacitance, we demonstrate RF-based single-shot…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-07-07","reactions":{}}