{"id":"arxiv/2607.07932","url":"https://arxiv.org/abs/2607.07932","tags":["cond-mat.mes-hall","physics.app-ph","quant-ph"],"score":0,"title":"Gate induced strain on a two-dimensional hole gas in silicon","domain":"cond-mat.mes-hall","source":"arxiv","authors":["D. van der Bovenkamp","C. S. A. Müller","B. D. Pantiru","I. Bošnjak","M. Cignoni","Q. Torrent Nicolau","M. E. Bal","S. Wiedmann","J. Ridderbos","F. A. Zwanenburg"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate thickness, and thereby the strain in the channel, results in the onset of a second subband contributing to Shubnikov-de Haas oscillations. Temperature-dependent magnetotransport measurements reveal distinct cyclotron masses of $m_c^*=(0.36\\pm0.04)m_0$ and $m_c^*=(0.49\\pm0.02)m_0$. The measured cyclotron masses differ from those expected for an idealized heavy-hole (HH)/light-hole (LH) picture, reflecting the…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-07-08","reactions":{}}