{"id":"arxiv/2607.09652","url":"https://arxiv.org/abs/2607.09652","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Silicon-Germanium Heterostructures with Enhanced Valley Splitting for Spin Qubits","domain":"cond-mat.mes-hall","source":"arxiv","authors":["David W. Kanaar","Efrain Martinez","Peihong Zhang","Mark F. Gyure"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout of gate-defined Si spin qubits. In this work, we present a device-level optimization strategy for pushing valley splittings to between 1 and 5 meV, well beyond values reported in nearly all previous theoretical studies. Using device-scale simulations that incorporate atomistic alloy disorder through a 1D tight-binding theory, we demonstrate that our proposed approach yields large valley splittings with a tight…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-07-10","reactions":{}}