{"id":"arxiv/2607.15675","url":"https://arxiv.org/abs/2607.15675","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Gento Yamahata","Takase Shimizu"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to $ν=2$, two spin-polarized valley edge channels are brought into…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-07-17","reactions":{}}