{"id":"arxiv/2608.02350","url":"https://arxiv.org/abs/2608.02350","tags":["quant-ph","physics.app-ph"],"score":0,"title":"Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond","domain":"quant-ph","source":"arxiv","authors":["Cheng-I Ho","Marina Davydova","Patrik Straňák","Felix Hoffmann","Peter Knittel","Andrej Denisenko","Jörg Wrachtrup"],"reviews":0,"subject":"quant-ph","summary":"Nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) diamond can form preferentially oriented ensembles with high sensing performance and low densities of lattice defects. Thin films of this material are a cornerstone of various imaging modalities. However, nitrogen injection needed to produce such films can transiently drive growth out of equilibrium, generating interfacial strain and spin defects that degrade NV coherence. Here, we investigate this disorder in $^{12}\\text{C}$-enriched, preferentially oriented NV layers grown on (111) diamond using two nitrogen-injection…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-08-03","reactions":{}}