{"id":"arxiv/2608.09466","url":"https://arxiv.org/abs/2608.09466","tags":["math.NA","math-ph"],"score":0,"title":"Second order unfitted ghost-FEM for elliptic interface problems with applications to low-dimensional semiconductor devices","domain":"math.NA","source":"arxiv","authors":["Clarissa Astuto","Giovanni Nastasi"],"reviews":0,"subject":"math.NA","summary":"We develop an unfitted ghost finite element method for elliptic interface problems with discontinuous diffusion coefficients and apply it to the electrostatic simulation of low-dimensional semiconductor devices. The proposed approach is based on a fixed Cartesian grid and represents the geometry by level-set functions, avoiding mesh generation and remeshing even in the presence of interfaces. A snapping-back-to-grid strategy is used to control the small-cut-cell issue, while interface conditions are weakly enforced by a symmetric Nitsche formulation. The method is first validated on…","category":"research","comments":0,"disputed":false,"division":"math","mentions":0,"discussed":0,"published":"2026-08-10","reactions":{}}