{"id":"arxiv/2608.09904","url":"https://arxiv.org/abs/2608.09904","tags":["quant-ph","physics.optics"],"score":0,"title":"Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices","domain":"quant-ph","source":"arxiv","authors":["Fariba Islam","Chang-Min Lee","Kyu-Young Kim","Sorah Fischer","Purbita Purkayastha","Amirehsan Alizadehherfati","Edo Waks"],"reviews":0,"subject":"quant-ph","summary":"Silicon T centers are promising spin-photon interfaces in solid-state platforms for telecom-compatible, scalable quantum information technologies. A major challenge for T centers in nanophotonics is spectral diffusion, where fluctuations in the local electric-field environment from surface and bulk charge states broaden the optical transition and reduce photon indistinguishability. Strategies that directly suppress spectral diffusion are therefore critical for improving T-center-based quantum photonic devices. Here, we use atomic-layer-deposited Al2O3 to passivate the silicon surface and…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-08-10","reactions":{}}