{"id":"arxiv/2608.11615","url":"https://arxiv.org/abs/2608.11615","tags":["cond-mat.mes-hall","cond-mat.mtrl-sci","physics.comp-ph","quant-ph"],"score":0,"title":"Spin lifetime anisotropy in graphene induced by the SiO2 interface","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Aron W. Cummings","Chunhao Guo","Andrew Grieder","Shihao Tu","Mayank Gupta","Junqing Xu","Juan Marmolejo-Tejada","Yuan Ping"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Understanding how common dielectric substrates influence the spin transport properties of graphene is essential for advancing graphene-based spintronic technologies. Here we use a comprehensive set of numerical simulations to reveal how a SiO$_2$ substrate modifies the spin texture and governs spin relaxation in graphene. Using first-principles density matrix dynamics simulations, as well as tight-binding (TB) transport simulations, we quantify the effects of electron-phonon scattering, impurity scattering, and electrostatic disorder on the spin relaxation process. We find that a 2D SiO$_2$…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-08-12","reactions":{}}