{"id":"arxiv/2608.27281","url":"https://arxiv.org/abs/2608.27281","tags":["quant-ph"],"score":0,"title":"Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation","domain":"quant-ph","source":"arxiv","authors":["S. Eserin","L. K. S. Zimmermann","E. Schneider","M. Ludlow","J. Heiler","O. G. Lloyd-Willard","K. Stockbridge","G. Aresta","L. Antwis","S. K. Clowes","M. Hofmann","S. Kucera","P. Berwian","F. Kaiser","B. N. Murdin"],"reviews":0,"subject":"quant-ph","summary":"Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show exceptionally high optical brightness and strong spin readout contrast. One barrier to scalable quantum devices based on these emitters is the challenge of maskless formation and rapid identification. Here, we demonstrate the formation of isolated bright single emitters in 4H-SiC, using low-energy maskless implantation of heavy ions bismuth and tin. Following annealing, up to 18% of implanted sites host a single…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-08-27","reactions":{}}