{"id":"arxiv/2608.28263","url":"https://arxiv.org/abs/2608.28263","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Ron Nodel","David W. Kanaar","Connor Nasseraddin","Tim J. Wilson","Hong-Wen Jiang","Jason R. Petta","Chris Anderson","Mark F. Gyure"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally expensive. Combining a Multi-Domain Multi-Model (MDMM) approach with an automated tuning routine, we identify gate voltages associated with selected charge configurations. This small set of self-consistent simulations can be augmented with Full Configuration Interaction (FCI) energy calculations to extract charging energies, lever…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-08-28","reactions":{}}