{"id":"arxiv/2609.11214","url":"https://arxiv.org/abs/2609.11214","tags":["cond-mat.mes-hall","cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Ding-Ming Huang","Jun-Hang Liu","Han Gao","Jie-Yin Zhang","Jian-Huan Wang","Fang-Ze Liu","Xin-Yu Zhou","Yi Luo","Bin-Xiao Fu","Xiao-Fei Liu","Ji-Yin Wang","Jian-Jun Zhang","H. Q. Xu"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-10","reactions":{}}