{"id":"arxiv/2609.12772","url":"https://arxiv.org/abs/2609.12772","tags":["physics.optics","cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"Interplay between growth conditions and formation of localized light emitters in epitaxial AlN thin films","domain":"physics.optics","source":"arxiv","authors":["Meysam Saeedi","Duc V. Dinh","Andrey N. Anisimov","Mingyun Yuan","Georgy V. Astakhov","Alberto Hernández-Mínguez"],"reviews":0,"subject":"physics.optics","summary":"AlN is a promising material for integrated quantum photonics due to its broad transparency window, its compatibility with CMOS technology, and the possibility to host localized light emitters acting as single photon sources. However, little is understood yet about the microscopic nature and formation mechanisms of these light emitters. In this contribution, we demonstrate that their formation efficiency depends significantly on the growth conditions of the AlN thin film. We reveal that localized light emitters with distinct zero-phonon lines in the 600--800~nm range can be efficiently formed…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-11","reactions":{}}