{"id":"arxiv/2609.20043","url":"https://arxiv.org/abs/2609.20043","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Johan Pelloux-Prayer","Elise Prin","Giselle A. Elbaz","Pierre-Louis Julliard","Amaryllis Comiti","Clément Nguyen","Sylvain Martin","Patrick Torresani","Renan Lethiecq","Carlos Augusto Suarez Segovia","Franck Arnaud","Etienne Nowak","Tristan Meunier","Bruna Cardoso Paz"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-17","reactions":{}}