{"id":"arxiv/2609.20137","url":"https://arxiv.org/abs/2609.20137","tags":["quant-ph"],"score":0,"title":"Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering","domain":"quant-ph","source":"arxiv","authors":["Atharva Paranjape","Kathrin Küster","Olga Shevstova","Lisa Ebo","Toni Hache","Klaus Kern","Rainer Stöhr","Jörg Wrachtrup","Aparajita Singha"],"reviews":0,"subject":"quant-ph","summary":"Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = $3 \\times 10^{-9}$ mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-17","reactions":{}}