{"id":"arxiv/2609.22937","url":"https://arxiv.org/abs/2609.22937","tags":["quant-ph","cond-mat.mtrl-sci"],"score":0,"title":"Efficient creation of shallow NV$^-$ ensembles by high-angle ion implantation","domain":"quant-ph","source":"arxiv","authors":["Kento Sasaki","Hideyuki Watanabe","Tokuyuki Teraji","Takashi Taniguchi","Kenji Watanabe","Kensuke Kobayashi"],"reviews":0,"subject":"quant-ph","summary":"Negatively charged nitrogen-vacancy (NV$^-$) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV$^-$ centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV$^-$ centers. By implanting $^{15}$N ions at angles exceeding 60$^\\circ$, we achieve high NV$^-$ yields approaching 10% with effective NV$^-$ depths below 10 nm. These yields are significantly higher than those typically reported for…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-19","reactions":{}}