{"id":"arxiv/2609.26277","url":"https://arxiv.org/abs/2609.26277","tags":["math-ph","cond-mat.mes-hall","cond-mat.mtrl-sci","physics.app-ph"],"score":0,"title":"Disentangling Measurement Protocol from Material Physics in Isotypic and Anisotypic SiC/Si Heterojunctions: A Metrology-Driven Study for Betavoltaic Energy Conversion","domain":"math-ph","source":"arxiv","authors":["Mikhail V. Dolgopolov"],"reviews":0,"subject":"math-ph","summary":"We compare isotypic (n-SiC/n-Si) and anisotypic (n-SiC/p-Si) heterojunctions using Kelvin probe force microscopy, scanning tunnelling spectroscopy, precision electrical measurements with a Keithley 2450 SourceMeter, and a 0.1 farad supercapacitor charge-storage test. Two-wire probing shows an enhanced low-bias current in the isotypic structures; four-wire Kelvin sensing removes the voltage-drop contribution of external leads and contacts and collapses this current to a much lower bulk and interface limited level. The high density of interface states detected by KPFM and STS, up to five times…","category":"research","comments":0,"disputed":false,"division":"math","mentions":0,"discussed":0,"published":"2026-08-15","reactions":{}}