{"id":"arxiv/2609.28671","url":"https://arxiv.org/abs/2609.28671","tags":["cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"Large-Area SnS Crystals by Controlled Sn-S Chemical Vapor Deposition: Growth Optimization, Morphology, and Raman Characterization","domain":"cond-mat.mtrl-sci","source":"arxiv","authors":["Bilal Ahmed"],"reviews":0,"subject":"cond-mat.mtrl-sci","summary":"Tin monosulfide (SnS) is a layered IV-VI semiconductor with strong in-plane anisotropy and promising properties for optoelectronic and ferroic applications. However, obtaining large, continuous, and morphologically well-defined SnS crystals remains challenging. Here, we report the growth of large-area SnS crystals using chemical vapor deposition with separate elemental Sn and S precursors. By controlling the precursor temperatures, source positions, substrate temperature, carrier-gas flow, and hydrogen flow, we obtain SnS crystals with lateral dimensions approaching 350 micrometers. The…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-23","reactions":{}}