{"id":"arxiv/2609.35702","url":"https://arxiv.org/abs/2609.35702","tags":["cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band","domain":"cond-mat.mtrl-sci","source":"arxiv","authors":["Timothy Draher","Nolan Bitner","Vasileios Niaouris","Claire E. McDermott","David Czaplewski","Supratik Guha","David D. Awschalom","F. Joseph Heremans","Alan M. Dibos"],"reviews":0,"subject":"cond-mat.mtrl-sci","summary":"Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-28","reactions":{}}