{"id":"arxiv/2610.24136","url":"https://arxiv.org/abs/2610.24136","tags":["cond-mat.mes-hall","quant-ph"],"score":0,"title":"Gate-defined quantum dot and charge noise analysis in a Forksheet transistor","domain":"cond-mat.mes-hall","source":"arxiv","authors":["Dominic Leclerc","Claude Rohrbacher","Alexis Morel","Joffrey Rivard","Romain Ritzenthaler","Christian Lupien","Hans Mertens","Naoto Horiguchi","Eva Dupont-Ferrier"],"reviews":0,"subject":"cond-mat.mes-hall","summary":"We report the cryogenic characterization of a 14-nm nMOS Forksheet transistor down to 10 mK. We demonstrate that the device retains transistor operation with improved characteristics at cryogenic temperatures, while also forming a gate-defined quantum dot that can be tuned to the single-electron regime. In the quantum-dot regime, we perform low-frequency charge-noise measurements across different charge occupations and observe an average charge-noise amplitude of $\\langle S_0\\rangle = 10\\;μ\\mathrm{eV}/\\sqrt{\\mathrm{Hz}}$ at 1 Hz, with a minimum measured value of…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-16","reactions":{}}