{"id":"arxiv/2610.26223","url":"https://arxiv.org/abs/2610.26223","tags":["quant-ph","cond-mat.mtrl-sci","cond-mat.supr-con"],"score":0,"title":"Sidewall Metrology Protocol for Superconducting Qubit Devices","domain":"quant-ph","source":"arxiv","authors":["Jørgen Garnæs","Henrik S. Guttesen","Astrid T. Rømer","Oscar Danielsson","Emily P. Duggan","Zhenhai Sun","Asen Lyubenov Georgiev","Li Wei Chang","Morten Kjaergaard","Mark Bieler","Lukas Grünhaupt","Sabbir A. Khan"],"reviews":0,"subject":"quant-ph","summary":"Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-19","reactions":{}}