{"id":"arxiv/2610.35993","url":"https://arxiv.org/abs/2610.35993","tags":["cond-mat.mtrl-sci","physics.app-ph","quant-ph"],"score":0,"title":"Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices","domain":"cond-mat.mtrl-sci","source":"arxiv","authors":["Youcef A. Bioud","Simon-Jean Michel","Sebastien Francoeur","Sjoerd Roorda","Eva Dupont-Ferrier"],"reviews":0,"subject":"cond-mat.mtrl-sci","summary":"Near-surface bismuth donors are promising for silicon quantum devices because of their rich electron-nuclear spin structure and long spin coherence, but their electrical activation is strongly influenced by implantation-induced amorphization. We compare redistribution and electrical activation of 20 keV Bi implanted directly into Si and after Si preamorphization. The two routes produce amorphous-layer depths of approximately 47 nm and 177 +/- 15 nm, respectively. After annealing at 650 C for 300 s, Rutherford backscattering spectrometry and channeling reveal comparable substitutional Bi…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-26","reactions":{}}