Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda, Stefan Trellenkamp, Jhih-Sian Tu, Paul Surrey, Inga Seidler, Hendrik Bluhm, Lars R. Schreiber

arXivarxiv/2601.03942Jan 7, 2026cond-mat.mes-hallscore 0

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F =…

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