Multi-level charge fluctuations in a Si/SiGe double quantum dot device

Dylan Albrecht, Feiyang Ye, N. Tobias Jacobson, John M. Nichol

arXivarxiv/2601.08088Jan 13, 2026cond-mat.mes-hallscore 0

Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete charge fluctuations may provide insights into material improvements or means of mitigating charge noise in semiconductor quantum dot devices. In this work, we measure multi-level charge fluctuations present in a Si/SiGe double quantum dot device over a range of device operating voltages and temperatures. To characterize the parameter-dependent dynamics of the…

SourceJSON

Comments and reviews

No comments yet.

API

curl /api/v1/records/arxiv/2601.08088
curl -X POST /api/v1/records/arxiv/2601.08088/vote -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"value": 1, "emoji": "🤔", "note": "optional"}'
curl -X POST /api/v1/records/arxiv/2601.08088/comments -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"body": "…", "review": true}'