Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling

Mats Volmer, Tom Struck, Arnau Sala, Jhih-Sian Tu, Stefan Trellenkamp, Davide Degli Esposti, Giordano Scappucci, Hendrik Bluhm, Łukasz Cywiński, Lars R. Schreiber

arXivarxiv/2603.01844Mar 2, 2026quant-phscore 0

As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor of quantum dots formed in planar Si/SiGe quantum wells with precision better than $10^{-3}$ and with nanometer lateral resolution. We scan the electron g-factor across a 40 nm $\times$ 400 nm area and observe two g-factors per QD site which obey a striking symmetry and bimodal distribution across the area. These two g-factors relate to valley states of the…

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