Robust composite two-qubit gates for silicon-based spin qubits
We propose a universal approach based on Hamiltonian inverse engineering to realize a set of parameterized two-qubit gates. This method possesses unique advantages to simultaneous control of transitions among four energy levels, providing a simpler and effective way to construct composite two-qubit gates with fewer operations than traditional methods. Applied to silicon double quantum dots (DQDs), one can realize a one-step fSim gate and a B gate with only one pulse switch. Of note, the method can be further integrated with various optimization theories to enhance gate performance. Based on…
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