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Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)

Zijin Lei, Yuze Wu, Christian Reichl, Stefan Fält, Werner Wegscheider

arXivarxiv/2603.07303Mar 7, 2026cond-mat.mtrl-sciscore 0

High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited superconductors. In this work, we investigate InAs/InGaAs quantum wells grown on InP (001) wafers, focusing on how the layer structure and strain influence the electronic properties and surface morphology. By combining quantum transport measurements with atomic force microscopy, we show that the layer design predominantly affects the mobility anisotropy, which…

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