Quantum electrometry in a silicon carbide power device

Yuichi Yamazaki, Akira Kiyoi, Naoyuki Kawabata, Yuki Watanabe, Ryosuke Akashi, Shunsuke Daimon, Nobumasa Miyawaki, Yu-ichiro Matsushita, Makoto Kohda, Takeshi Ohshima

arXivarxiv/2603.13836Mar 14, 2026quant-phscore 0

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which has not been realized until now. Here we report that the silicon vacancy (Vsi) in SiC has outstanding characteristics for detecting electric fields applied in various directions within a high-biased SiC device. Vsi exhibits an equivalent response to electric field components parallel (Epara) and perpendicular (Eperp) to the c-axis, a feature unique among…

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