Probing Electrostatic Disorder via g-Tensor Geometry

Edmondo Valvo, Christian Ventura-Meinersen, Michele Jakob, Stefano Bosco, Tereza Vakhtel, Maximilian Rimbach-Russ

arXivarxiv/2604.09475Apr 10, 2026cond-mat.mes-hallscore 0

Low-frequency charge noise induced by fluctuating electrostatic disorder is a major limitation for semiconductor hole spin qubits. Here, we analyze the quasistatic response of a hole spin qubit to individual two-level fluctuators (TLFs). We show that, due to the anisotropy of the g-tensor, the qubit response depends on the geometry of the fluctuator-induced dipolar perturbation. We then propose a readout protocol that isolates selected g-tensor components through an accumulated Berry phase and estimate, within our readout model, an order-unity signal-to-noise ratio with a total protocol time…

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