Enhancing Coherence of Spin Centers in p-n Diodes via Optimization Algorithms
Solid-state spin defects hold great promise as building blocks for various quantum technologies. Embedding spin centers in $p$-$n$ diodes under reverse bias has proved to be a powerful strategy to narrow the optical linewidth and increase spin coherence, while also enabling control of the photoluminescence wavelength via Stark shift. Given the multitude of parameters influencing spin centers in diodes (e.g., doping densities and profiles, temperature, bias voltage, spin center position), a question that has not yet been answered is: which set of these design parameters maximizes spin center…
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