Size-Limited Room Temperature Single-Photon Emission from Sidewall-Treated Fractional Dimension InGaN Quantum Dots: Determined by Density-of-States-Corrected Ultrafast Carrier Dynamics and Improved Signal-to-Noise Ratio
Room-temperature single-photon emission (SPE) resulting from a biexciton-exciton cascaded decay is demonstrated for the first time from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots (QDs) embedded in vertical GaN nanowires. Diameter-dependent biexciton-exciton dynamics are analysed to determine the eligibility of QD as a single-photon emitter. The signal-to-noise ratio degrades with increasing QD diameter. Background noise photons pose a bottleneck to achieving SPE. This is also explained from a carrier dynamics perspective. Surface recombination…
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