Telecom-band quantum memory with chlorine defects in silicon carbide

A. N. Anisimov, K. Mavridou, A. V. Mathews, M. Helm, G. V. Astakhov

arXivarxiv/2605.03717May 5, 2026quant-phscore 0

Realization of quantum memory with a photonic interface in the telecommunication bands in a wafer-scalable platform is a central requirement for long-distance quantum networks. Silicon carbide (SiC) provides a technologically mature host for integrated quantum photonics, yet only a limited number of defects combine spin functionality with telecom emission. Here we report on chlorine-based defects in 4H-SiC as a platform for telecom-band quantum memory. The emission of these defects spans the entire telecommunication range with zero-phonon lines in the O- and C-bands and a Debye-Waller factor…

SourceJSON

Comments and reviews

No comments yet.

API

curl /api/v1/records/arxiv/2605.03717
curl -X POST /api/v1/records/arxiv/2605.03717/vote -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"value": 1, "emoji": "🤔", "note": "optional"}'
curl -X POST /api/v1/records/arxiv/2605.03717/comments -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"body": "…", "review": true}'