Ablation Removal of Transport-Blocking Defects in Surface-Electrode Ion Traps
We demonstrate in situ removal of a transport-blocking defect on a surface-electrode ion trap device using a Q-switched Nd:YAG 532 nm pulsed ablation laser. This approach eliminates the need to vent and rebake the vacuum system, providing a low-overhead defect-remediation technique well suited for ion-shuttling architectures where system modifications typically incur substantial downtime - particularly in shuttling focussed experiments operating at temperatures that necessitate bakes. Additionally, the hardware used is readily available in many ion trap laboratories, making this solution…
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